The activities of the Microelectronics for Wireless Communications area
include the design and fabrication of state-of-the-art, low-cost,
low-power RF and microwave monolithic integrated circuits (MMICs) and
GHz analog-to-digital converters (ADC) for insertion into wireless
communications systems, HDTV, and advanced digital radar systems.
Future research directions include the continuing development of current
InGaAs HFET and HBT technologies, ultra-low power MOSFET device
technology, and integration of MEMS devices into the CCSM MMICs and ADC
technology base. Capitalizing on their world leadership in InGaP and
InGaAs HBT technology, CCSM researchers are developing high-speed ADCs,
linear power amplifiers, and low phase noise for voltage controlled
oscillators (VCOs). CCSM researchers are working closely with industry
to develop low-cost, direct ion-implanted GaAs MESFETs for collision
avoidance radar and 28 Ghz MMICs for local multiple distribution service
(LMDS).
UIUC researchers have developed a novel method for fabricating low-cost,
high-performance metal-semiconductor field-effect transistors (MESFETs)
for millimeter-wave applications. Researchers fabricated this
three-stage, high-frequency amplifier by using direct ion implantation
of silicon and beryllium into three-inch semi-insulating
gallium-arsenide substrates.
The MESFET device operates at 77 Ghz and will be used by automakers in
the 21st century for collision avoidance radar systems. Among other
things, these systems promise to improve highway safety by decreasing
the number of head-on collisions.
