CCSM research in the area of semiconductor materials and quantum
structures encompasses the growth of compound semiconductor materials
for LEDs, lasers, HBTs, native oxide studies, photonic lattices, and
other device applications. Research on quantum structures is focused on
the development and characterization of selective epitaxy and
self-organizing growth techniques and submicron fabrication techniques.
The materials systems addressed in this research include III-V compounds
with band gaps ranging from the near-UV to the mid-IR, III-V and
group-IV alloys, and heterostructures, superlattices, quantum wells,
wires and dots based on these materials. A broad range of epitaxial
deposition systems, including MOCVD, CBE, and MBE, are used in the
growth of these materials.
The goal of this research is to develop the technology base in materials growth and both ex-situ and in-situ device fabrication that will enable the commercial use of compound semiconductor devices and integrated circuits, including multiple-layer heterostructures, native oxides, selective-area epitaxy, heavily lattice mismatched "epitaxial" growth, and quantum-wire and quantum-dot devices. The research in this area may lead to breakthroughs in compound semiconductor materials and devices that will have important applications in future microelectronic, optoelectronic, and photonic systems in addition to near-term applications in high-speed digital, analog, and wireless data transmission and processing.
